Terahertz Metamaterial Absorbers Implemented in CMOS
AbstractThe purpose of this article is to show the design and manufacture of terahertz (THz) metamaterial (MM) absorbers as well as their monolithic integration into a commercial CMOS technology along with its related readout circuits in order to construct a low-cost, uncooled, and high resolution THz camera. We begin by describing the work that has been done on single band and broadband MM absorbers on custom substrates. After that, we move on to a description of the integration of such resonators into a six metal layer 180 nm CMOS process and its coupling with two different types of microbolometer sensors: vanadium oxide (VOx) and silicon (Si) pn diode. In addition, we show that it is possible to integrate THz sensors with readout circuits to create a single monolithic THz focal plane array (FPA). The VOx and Si pn diode detectors are used to capture reflection pictures of a metallic item that is disguised inside of a manila envelope. This demonstrates that the technology is suitable for stand-off detection of concealed objects. Finally, we will show the ongoing work that is being done to scale this technology up to a 64 64 FPA.
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